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PAC investigation
Incorporation and complex
formation of dopants
Identification of defects on
atomic level
Investigation of the formation of
compensating centers
Optical Methods
Identification of impurity levels in
II-VI compounds via
photoluminescence with
radioactive dopants
UV-VIS investigations
Diffusion
Analysis of diffusion of
impurities in II-VI compounds via
radiotracer technique
MOCVD growth
MOCVD growth of II-VI
compounds
In-Situ doping with the PAC
probe 111In
Hall-Measurements
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Nanocrystalline semiconductors
Doping of nanocrystalline InP
with the acceptor Cd via
radioactive transmutation
Incorporation of the donor In in
nanocrystalline ZnO
Nanocrystalline metals and alloys
Investigation of grain boundery
structures by PAC-method
Microscopic inhomogenity in
nanocrystalline NiCu alloys
Impurity diffusion in nano-Ni
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Ab initio DFT
Calculations
Additional information for
defects experimentally
characterised by EFG
measurement:
- chemical nature
- charge state
- lattice relaxation
Theoretical analysis of the
electronic structure of
dopants and intrinsic
defects
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